Samsung to Develop Next-Generation Semiconductors with Toshiba, Intel

Samsung, Intel ve Toshiba’yla Yeni Nesil Yarıiletkenleri Geliştirecek

Samsung Electronics Co. ABD’den Intel Co. ve Japonya’dan Toshiba Co. ile yeni nesil yarıiletken teknolojisi geliştirmek için ortak bir projeye girdiklerini açıkladı.

Üç firma, on nanometreden daha ince devrelere sahip olan bilgisayar bellek kartları yaparak yarıiletkenlerin kapasitesini arttırmayı hedefliyor. Posta pulu ebatındaki kartlar 3 kat daha fazla veri depolayabilecek.

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Samsung Electronics has launched a joint project to develop technology for next-generation semiconductors with Japan’s Toshiba Corporation and U.S.’s Intel Corporation.

The three firms are aiming to boost the capacity of semiconductors by making computer memory chips that have circuits thinner than ten nanometers. The postage stamp-sized chips will be able to store three times as much data.

(18.06.2011 – KBS World)

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